Microstructure development and electrical properties of RuO2-based lead-free thick film resistors

Journal of Materials Science: Materials in Electronics

Volumn 17, Issue 11, 2006, Pages 951-962

  Busana, M G ^a   Prudenziati, Maria ^a   Hormadaly, J ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRIC PROPERTIES; ENERGY DISPERSIVE SPECTROSCOPY; MICROELECTRONICS; MORPHOLOGY; RESISTORS; RUTHENIUM ALLOYS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BISMUTHATE GLASSES; CONDUCTING PHASE; HYBRID MICROELECTRONICS; THICK FILM RESISTORS;

THICK FILM DEVICES;

EID: 33749264374     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-006-0036-x     Document Type: Article

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