Anisotropic resistivity of (100)-oriented mesoporous silicon

Applied Physics Letters

Volumn 89, Issue 13, 2006, Pages

  Borini, S ^a   Boarino, L ^a   Amato, G ^a  

^a ISTITUTO NAZIONALE DI RICERCA METROLOGICA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; NANOSTRUCTURED MATERIALS; PERCOLATION (SOLID STATE); POROUS SILICON;

ANISOTROPIC RESISTIVITY; ELECTRICAL ANISOTROPY; LONGITUDINAL CONDUCTIVITY; NANOSTRUCTURATION;

MESOPOROUS MATERIALS;

EID: 33749262280     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2357882     Document Type: Article

References (18)

1. A. G. Cullis, L. T. Canham, and P. Calcott, J. Appl. Phys. 82, 909 (1997).
2. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
3. Y. Nakajima, A. Kojima, and N. Koshida, Appl. Phys. Lett. 81, 2472 (2002).
4. H. Münder, M. G. Berger, S. Frohnhoff, M. Thonissen, and H. Luth, J. Lumin. 57, 5 (1993).
5. M. Ben-Chorin, in Properties of Porous Silicon, edited by L. T. Canham (INSPEC, London, 1997), pp. 165-175.
6. A. Grosman and C. Ortega, in Properties of Porous Silicon, edited by L. T. Canham (INSPEC, London, 1997), pp. 328-335.
7. E. Garrone, F. Geobaldo, P. Rivolo, G. Amato, L. Boarino, M. Chiesa, E. Giamello, R. Gobetto, P. Ugliengo, and A. Viale, Adv. Mater. (Weinheim, Ger.) 17, 528 (2005).
8. L. Boarino, C. Baratto, F. Geobaldo, G. Amato, E. Comini, A. M. Rossi, G. Faglia, G. Lerondel, and G. Sberveglieri, Mater. Sci. Eng., B 69, 210 (2000).
9. M. Chiesa, G. Amato, L. Boarino, E. Garrone, F. Geobaldo, and E. Giamello, Angew. Chem., Int. Ed. 42, 5032 (2003).
10. M. I. J. Beale, J. D. Benjamin, M. J. Uren, N. G. Chew, and A. G. Cullis, J. Cryst. Growth 73, 622 (1985).
11. F. Ferrieu, A. Halimaoui, and D. Bensahel, Solid State Commun. 84, 293 (1992).
12. C. J. Oton, Z. Gaburro, M. Ghulinyan, L. Pancheri, P. Bettotti, L. Dal Negro, and L. Pavesi, Appl. Phys. Lett. 81, 4919 (2002).
13. P. A. Forsh, L. A. Osminkina, V. Yu. Timoshenko, and P. K. Kashkarov, Semiconductors 38, 603 (2004).
14. V. Lehmann, F. Hofmann, F. Möller, and U. Grüning, Thin Solid Films 255, 20 (1995).
15. R. Schwarz, F. Wang, M. Ben-Chorin, S. Grebner, A. Nikolov, and F. Koch, Thin Solid Films 255, 23 (1995).
16. V. Yu. Timoshenko, Th. Dittrich, V. Lysenko, M. G. Lisachenko, and F. Koch, Phys. Rev. B 64, 085314 (2001).
17. M. Ben-Chorin, F. Moller, F. Koch, W. Schirmacher, and M. Eberhard, Phys. Rev. B 51, 2199 (1995).
18. Y. Lubianiker and I. Balberg, Phys. Rev. Lett. 78, 2433 (1997).