The employment of cathodoluminescent method for characterization silicon oxide - Silicon interface

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 649-654

  Zamoryanskaya, M V ^a   Sokolov, V I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Cathodoluminesence; Silicon; Silicon oxide; SiO2 Si interface

Indexed keywords

CATHODOLUMINESCENCE; DEFECTS; OXIDE FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SILICON;

CATHODOLUMINESENCE; DEPTH RESOLUTION; INTRINSIC DEFECTS; SILICON INTERFACE; SILICON SUBSTRATES; SIO2-SI INTERFACE; STRUCTURE DEFECTS; THIN SILICON OXIDE;

SILICON OXIDES;

EID: 33749244652     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.649     Document Type: Conference Paper

References (5)

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5. M.V. Zamoryanskaya, V.I. Sokolov, V. Plotnikov, Applied Surface Science (2004), 345-349