Fully-integrated WCDMA SiGeC BiCMOS transceiver

Proceedings of ESSCIRC 2005: 31st European Solid-State Circuits Conference

Volumn , Issue , 2005, Pages 519-522

  Pellat, Bruno ^a   Blanc, Jean Pierre ^a   Goussin, Franck ^a   Thevenet, Davy ^a   Majcherczak, Sandrine ^a   Reaute, Fabien ^a   Belot, Didier ^a   Garcia, Patrice ^a   Persechini, Pascal ^a   Cerisier, Patrick ^a   Conti, Patrick ^a   Level, Philippe ^b   Kraemer, Michael ^b   Granata, Angelo ^a  

^a STMICROELECTRONICS   (Italy)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; GAIN CONTROL; TRANSCEIVERS; TRANSMITTERS;

LOW DROP REGULATOR (LDO); POWER CONSUMPTION; VARIABLE IF ARCHITECTURE; WCDMA TRANSCEIVERS;

CODE DIVISION MULTIPLE ACCESS;

EID: 33749183067     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIR.2005.1541674     Document Type: Conference Paper

References (4)

1. W.Y. Ali-Ahmad,"Effective IIP2 estimation for two-tone and WCDMA modulated blockers in zero-IF", RF design, Apr 2004.
2. M. Brandolini et al, "A CMOS Direct Down-Converter with 78dBm Minimum IIP2 for G Cell-Phones", ISSCC 2005.
3. W. Thomann et al, "A Single-chip 75-GHz/0,35-mm SiGe BiCMOS W-CDMA Homodyne Transceiver for UMTS Mobiles", RFIC 2004.
4. J. F. Carpentier et al "A SiGeC BiCMOS WCDMA ZerIF Front-End using an above IC SAW filter" ISSCC 2005.