A CMOS direct down-converter with +78dBm minimum IIP2 for 3G cell-phones

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 48, Issue , 2005, Pages

  Brandolini, Massimo ^a   Rossi, Paolo ^a   Sanzogni, Davide ^a   Svelto, Francesco ^a  

^a UNIVERSITY OF PAVIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; ELECTRIC CONVERTERS; ELECTRIC POWER SUPPLIES TO APPARATUS; SPURIOUS SIGNAL NOISE;

CELL-PHONES; DOWN-CONVERTERS; NOISE DENSITY;

CMOS INTEGRATED CIRCUITS;

EID: 28144442737     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. D. Manstretta et al., "Second-Order Intermodulation Mechanisms in CMOS Downconverters," IEEE J. Solid-State Circuits, vol. 38, pp. 394-406, Mar., 2003.
2. H. Darabi, A. Abidi, "Noise in RF-CMOS Mixers: A Simple Physical Model," IEEE J. Solid-State Circuits, vol. 35, pp. 15-25, Jan., 2000.