Morphological and magnetic properties of Ge/MnxGe1-x/Ge(0 0 1)2 × 1 diluted magnetic semiconductor

Surface Science

Volumn 600, Issue 18, 2006, Pages 4190-4194

  De Padova, P ^a   Generosi, A ^a   Paci, B ^a   Albertini, V Rossi ^a   Perfetti, P ^a   Quaresima, C ^a   Olivieri, B ^b   Richter, M C ^c   Heckmann, O ^c   D'Orazio, F ^d   Lucari, F ^d   Hricovini, K ^c  

^a CNR   (Italy)

^b INSTITUTE OF ATMOSPHERIC SCIENCES AND CLIMATE   (Italy)

^c UNIVERSITÉ DE CERGY PONTOISE   (France)

^d UNIVERSITY OF L'AQUILA   (Italy)

Author keywords

DMS; EDXR; MOKE; RHEED

Indexed keywords

MAGNETIC PROPERTIES; MANGANESE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL KERR EFFECT; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM;

CURIE TEMPERATURE; EX SITU BY ENERGY DISPERSIVE X-RAY REFLECTIVITY (EDXR); FILM ROUGHNESS; MAGNETO-OPTICAL KERR EFFECT (MOKE);

MAGNETIC SEMICONDUCTORS;

EID: 33749142063     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.02.071     Document Type: Article

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