The effect of AlAs submonolayer insertion on the oscillator strength of excitons in GaAs/AlGaAs quantum wells

Semiconductor Science and Technology

Volumn 21, Issue 8, 2006, Pages 1018-1021

  Mejri, C ^a   Chaouache, M ^b   Maaref, M ^a   Voisin, P ^c   Gerard, J M ^d  

^a UNIVERSITÉ DE CARTHAGE   (Tunisia)

^b Institut National de Recherche Scientifique et Technique Tunis   (Tunisia)

^c CNRS   (France)

^d CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EXCITONS; MONOLAYERS; SEMICONDUCTING GALLIUM ARSENIDE;

DIFFERENTIAL REFLECTIVITY; OSCILLATOR STRENGTH; SUBMONOLAYER INSERTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33749056858     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/8/005     Document Type: Article

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