Wavelength tuning in GaAs/AlGaAs quantum wells by InAs submonolayer insertion

Journal of Physics Condensed Matter

Volumn 11, Issue 17, 1999, Pages 3629-3633

  Xu, Z Y ^a,b   Wang, J ^a   Wang, Y ^a   Ge, W K ^a   Li, Qing ^b   Li, S S ^b   Henini, M ^c  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; EXCITONS; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

SUBMONOLAYER INSERTION; WAVELENGTH TUNING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032654257     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/11/17/320     Document Type: Article

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