Dilute Ga dopant in TiO2 by X-ray absorption near-edge structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 9 A, 2006, Pages 7028-7031

  Okajima, Toshihiro ^a   Yamamoto, Tomoyuki ^b   Kunisu, Masahiro ^c   Yoshioka, Satoru ^c   Tanaka, Isao ^c   Umesaki, Norimasa ^d  

^a Kyushu Synchrotron Light Research Center   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c KYOTO UNIVERSITY   (Japan)

^d JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

Dopant; First principles calculations; Titanium dioxide; X ray absorption near edge structure spectroscopy

Indexed keywords

DOPING (ADDITIVES); GALLIUM; LIGHT ABSORPTION; OXYGEN; SOLID SOLUTIONS; X RAY ANALYSIS;

ALIOVALENT IMPURITY; FIRST-PRINCIPLES CALCULATIONS; OXYGEN VACANCIES; X-RAY ABSORPTION NEAR-EDGE STRUCTURE SPECTROSCOPY (XANES);

TITANIUM DIOXIDE;

EID: 33749027190     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.7028     Document Type: Article

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