A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

Chinese Physics

Volumn 15, Issue 10, 2006, Pages 2422-2426

  Ma, Long ^a   Huang, Ying Long ^a   Zhang, Yang ^a   Yang, Fu Hua ^a   Wang, Liang Chen ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Bistability; High electron mobility transistor (HEMT); Molecular beam epitaxy (MBE); Resonant tunnelling diode (RTD); Self latching

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; RESONANT TUNNELING; TRANSCONDUCTANCE; TUNNEL DIODES;

BISTABILITY; RESONANT TUNNELLING DIODE (RTD); SELF-LATCHING; STATIC INVERTERS;

ELECTRIC INVERTERS;

EID: 33749018227     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/15/10/039     Document Type: Article

References (12)

1. http://www.sia-online.org/home.cfm
2. Chang L L, Esaki L and Tsu R 1974 Appl. Phys. Lett. 24 593
3. Zhang X X, Zeng Y P, Wang X G, Wang B Q and Zhu Z P 2004 Chin. Phys. 13 1560
4. Zhang X X, Zeng Y P, Qiu Z J, Wang B Q and Zhu Z P 2004 Chin. Phys. 13 954
5. Cheng P and Harris J S 1990 Appl. Phys. Lett. 56 1676
6. Reddy V K, Tsao A J and Neikirk D P 1990 Elec. Lett. 26 1741
7. Desalvo G C, Teseng W F and Comas J 1992 J. Elec. Soc. 139 831
8. Laruelle F, Ramdane A and Faini G 1992 Surf. Sci. 267 396
9. Maezawa K and Mizutani T 1993 Jpn. J. Appl. Phys. 32 L42
10. Brown E R, McMahon O B, Mahoney L J and Molvar K M 1996 Elec. Lett. 32 938
11. Gan K J and Su Y K 1997 J. Appl. Phys. 82 5822
12. Zhao P, Cui H L and Woolard D L 2001 Phys. Rev. B 63 075302