Investigation and study of the electrical characteristics of anodic oxide films SiO2 annealed at various temperatures

Journal of Materials Processing Technology

Volumn 181, Issue 1-3 SPEC. ISS., 2007, Pages 230-234

  Nadji, Bécharia ^a  

^a UNIVERSITY OF BOUMERDES   (Algeria)

Author keywords

Annealing oxidation; Fowler Nordheim conduction; Interface states density, Electrical characterisation; MOS capacitors; Pure water

Indexed keywords

ANNEALING; ANODIC OXIDATION; ELECTRIC PROPERTIES; MOS CAPACITORS; SILICA; SILICON WAFERS;

ANNEALING OXIDATION; ELECTRICAL CHARACTERISATION; FOWLER-NORDHEIM CONDUCTION; INTERFACE STATES DENSITY; PURE WATER;

THIN FILMS;

EID: 33748967067     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmatprotec.2006.03.027     Document Type: Article

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