Growth conditions of β-FeSi2 single crystals by chemical vapor transport

Journal of Crystal Growth

Volumn 295, Issue 2, 2006, Pages 129-132

  Wang, J F ^a   Saitou, S ^a   Ji, S Y ^a   Isshiki, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Growth from vapor; A2. Single crystal growth; B2. Semiconducting silicon compounds

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; IRON COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; TRANSPORT PROPERTIES;

CHEMICAL VAPOR TRANSPORT (CVT); GROWTH FROM VAPOR; TRANSPORT RATE;

SINGLE CRYSTALS;

EID: 33748959158     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.08.003     Document Type: Article

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