-
1
-
-
21844475179
-
Time-resolved spectral output of pulsed GaAs lasers
-
Gonda T., Junker H., and Lamorte M.F. Time-resolved spectral output of pulsed GaAs lasers. IEEE J Quant Electron QE-1 (1965) 159-163
-
(1965)
IEEE J Quant Electron
, vol.QE-1
, pp. 159-163
-
-
Gonda, T.1
Junker, H.2
Lamorte, M.F.3
-
2
-
-
0029779202
-
Time-resolved emission studies of GaAs/AlGaAs laser diode arrays on different heat sinks
-
Voss M., Lier C., Menzel U., Bärwolff A., and Elsaesser T. Time-resolved emission studies of GaAs/AlGaAs laser diode arrays on different heat sinks. J Appl Phys 79 (1996) 1170-1172
-
(1996)
J Appl Phys
, vol.79
, pp. 1170-1172
-
-
Voss, M.1
Lier, C.2
Menzel, U.3
Bärwolff, A.4
Elsaesser, T.5
-
3
-
-
33748918461
-
-
Kozłowska A, Mala{ogonek}g A, Wróbel S. Determination of junction temperature of laser diode arrays operating under quasi continuous conditions. Europhysics Conference Abstracts CLEO/Europe 2003;27E.
-
-
-
-
4
-
-
0033704174
-
Spectroscopic measurements of mounting - induced strain in optoelectronic devices
-
Bärwolff A., Tomm J.W., Muller R., Weiss S., Hutter M., Oppermann H., et al. Spectroscopic measurements of mounting - induced strain in optoelectronic devices. IEEE Trans Adv Pack 23 (2000) 170
-
(2000)
IEEE Trans Adv Pack
, vol.23
, pp. 170
-
-
Bärwolff, A.1
Tomm, J.W.2
Muller, R.3
Weiss, S.4
Hutter, M.5
Oppermann, H.6
-
5
-
-
0021157037
-
Some aspects of bonding-solder deterioration observed in long-lived semiconductor lasers: Solder migration and whiskers growth
-
Mizuishi K. Some aspects of bonding-solder deterioration observed in long-lived semiconductor lasers: Solder migration and whiskers growth. J Appl Phys 55 (1984) 289-295
-
(1984)
J Appl Phys
, vol.55
, pp. 289-295
-
-
Mizuishi, K.1
-
7
-
-
0004242002
-
-
ISPEC, the Institution of Electrical Engineers, London p. 43-4
-
Adachi S. Properties of aluminium gallium arsenide (1993), ISPEC, the Institution of Electrical Engineers, London p. 43-4
-
(1993)
Properties of aluminium gallium arsenide
-
-
Adachi, S.1
-
8
-
-
13244273873
-
Diamond cools high-power emitters
-
Quagan R. Diamond cools high-power emitters. Laser Focus World 1 (2005) 159-162
-
(2005)
Laser Focus World
, vol.1
, pp. 159-162
-
-
Quagan, R.1
-
9
-
-
33748918627
-
-
.
-
-
-
-
10
-
-
0035502182
-
Materials for thermal conduction
-
Chung D.D.L. Materials for thermal conduction. Appl Therm Eng 21 (2001) 1593-1605
-
(2001)
Appl Therm Eng
, vol.21
, pp. 1593-1605
-
-
Chung, D.D.L.1
-
11
-
-
33748928509
-
-
Kaliński D. Report of project No 7T08C01917 2001 (in Polish), Warsaw 2001.
-
-
-
-
13
-
-
21844458910
-
-
Lichtenstein N. 325 watt from 1 cm wide 9XX laser bars for DPSSL- and FL-applications. Part of proceedings SPIE, vol. 5711 High - Power diode laser technology and applications III, 2005.
-
-
-
-
14
-
-
3543147781
-
Thermal characteristics of high-power, long-pulse width, quasi-CW laser diode arrays
-
Meadows B.L., Amzajerdian F., Baker N.R., Sudesh V., Singh U.N., and Kavaya M.J. Thermal characteristics of high-power, long-pulse width, quasi-CW laser diode arrays. Proc SPIE-Int Soc Opt Eng 5336 (2004) 203-211
-
(2004)
Proc SPIE-Int Soc Opt Eng
, vol.5336
, pp. 203-211
-
-
Meadows, B.L.1
Amzajerdian, F.2
Baker, N.R.3
Sudesh, V.4
Singh, U.N.5
Kavaya, M.J.6
-
15
-
-
2542424756
-
Device deformation during low-frequency pulsed operation of high-power diode bars
-
Gerhardt A., Weik F., QuocTran T., Tomm J.W., Elsaesser, Biesenbach J., et al. Device deformation during low-frequency pulsed operation of high-power diode bars. Appl Phys Lett 84 18 (2004) 3525-3527
-
(2004)
Appl Phys Lett
, vol.84
, Issue.18
, pp. 3525-3527
-
-
Gerhardt, A.1
Weik, F.2
QuocTran, T.3
Tomm, J.W.4
Elsaesser5
Biesenbach, J.6
-
16
-
-
0030677190
-
MOVPE-grown (AlGa)As double-barrier multiquantum well (DBMQW) laser diode with low vertical beam divergence
-
Mala{ogonek}g A., and Strupiński W. MOVPE-grown (AlGa)As double-barrier multiquantum well (DBMQW) laser diode with low vertical beam divergence. J Crystal Growth 170 (1997) 408-412
-
(1997)
J Crystal Growth
, vol.170
, pp. 408-412
-
-
Malag, A.1
Strupiński, W.2
-
17
-
-
37649027165
-
-
Malag A, Kozlowska A, Latoszek M, Wawrzyniak P, Teodorczyk M, Dobrzański L. Low vertical beam divergence double-barrier separate confinement heterostructure (DBSCH) SQW high-power laser diodes for λ = 800 nm range. CLEO/Europe - EQEC 2005, Europhysics Conference Abstracts; 2005, 29B.
-
-
-
-
19
-
-
0042876537
-
An exact method of measuring the junction temperature in GaAs laser diodes
-
Nakwaski W. An exact method of measuring the junction temperature in GaAs laser diodes. Electron Technol 11 (1978) 37-55
-
(1978)
Electron Technol
, vol.11
, pp. 37-55
-
-
Nakwaski, W.1
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