Design of a silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 νm

Journal of Optics A: Pure and Applied Optics

Volumn 8, Issue 10, 2006, Pages 909-913

  Casalino, M ^a,b   Sirleto, L ^a   Moretti, L ^b   Della Corte, F ^b   Rendina, I ^a  

^a CNR   (Italy)

^b UNIVERSITY MEDITERRANEA OF REGGIO CALABRIA   (Italy)

Author keywords

Internal photoemission; Photodetector; Resonant cavity enhanced (RCE); SOI

Indexed keywords

CAVITY RESONATORS; OPTICAL DESIGN; PHOTOEMISSION; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES; SILICON; SILICON ON INSULATOR TECHNOLOGY;

INTERNAL PHOTOEMISSION; METAL SILICON INTERFACE; PHOTOEMISSION EFFECT; RESONANT CAVITY ENHANCED PHOTODETECTOR;

PHOTODETECTORS;

EID: 33748888198     PISSN: 14644258     EISSN: 17413567     Source Type: Journal    
DOI: 10.1088/1464-4258/8/10/013     Document Type: Article

References (12)

1. Zimmermann H 2004 Silicon photo-receivers in silicon photonics topics Appl. Phys. 94 239-68 and reference therein
2. Fam S, Colace L, Masini G and Assanto G 2002 Appl. Phys. Lett. 81 586-8
3. Dosunmu O I, Cannon D D, Emsley M K, Kimerlimg L C and Unlu M S 2005 IEEE Photon. Technol. Lett. 17 175-7
4. Chan E Y, Card H C and Teich M C 1980 IEEE J. Quantum Electron. 16 373-81
5. Kimukin I, Ozbay E, Biyikli N, Kartaloglu T, Aytur O, Unlu S and Tuttle G 2000 Appl. Phys. Lett. 77 3890-2
6. Vickers V E 1971 Appl. Opt. 10 2190-2
7. Fowler R H 1931 Phys. Rev. 45 38
8. Muriel M A and Carballar A 1997 IEEE Photon. Technol. Lett. 9 955-7
9. Yeh P 1988 Optical Waves in Layered Media (New York: Interscience)
10. Emsley M K, Dosunmu O and Unlu M S 2002 IEEE J. Sel. Top. Quantum Electron. 8 948-55
11. Bostan C G and de Ridder R M 2002 J. Optoelectron. Adv. Mater. 4 921-8
12. Chan E Y and Card H C 1980 Appl. Opt. 19 1309-15