Schottky barrier transport in InSb/AlInSb quantum well field effect transistor structures

Semiconductor Science and Technology

Volumn 21, Issue 10, 2006, Pages 1408-1411

  Orr, J M S ^a,b   Buckle, P D ^a   Fearn, M ^a   Wilding, P J ^a   Bartlett, C J ^a   Emeny, M T ^a   Buckle, L ^a   Ashley, T ^a  

^a QINETIQ   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; THERMIONIC EMISSION;

GATE CURRENT; METAL-SEMICONDUCTOR INTERFACES; ROOM TEMPERATURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33748875150     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/10/006     Document Type: Article

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