Stability and quantum efficiency of a novel type of a-Si:H/a-SiC:H based UV detector

Thin Solid Films

Volumn 337, Issue 1-2, 1999, Pages 232-234

  Mandracci, P ^a   Rastello, M L ^b   Rava, P ^c   Giuliani, F ^a   Giorgis, F ^a  

^a POLITECNICO DI TORINO   (Italy)

^b ISTITUTO ELETTROTECNICO NAZIONALE GALILEO FERRARIS   (Italy)

^c Elettrorava SpA   (Italy)

Author keywords

Amorphous silicon; Photoelectrical properties; Thin film; UV detectors

Indexed keywords

EID: 0141642765     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01383-2     Document Type: Article

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