New electron beam proximity effects correction approach for 45 and 32 nm nodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 8 A, 2006, Pages 6462-6467

  Manakli, S ^a   Docherty, K ^a   Pain, L ^b   Todeschini, J ^c   Jurdit, M ^b   Icard, B ^b   Chomat, M ^a   Minohetti, B ^a  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Dose modulation; E beam proximity effects correction (EBPC); Electron beam lithography; OPC; Process improvement; RET

Indexed keywords

BACKSCATTERING; DISTANCE MEASUREMENT; INTEGRATED CIRCUIT MANUFACTURE; OPTICAL RESOLVING POWER;

DOSE MODULATION; E-BEAM PROXIMITY EFFECTS CORRECTION (EBPC); OPC; PROCESS IMPROVEMENT; RET;

ELECTRON BEAM LITHOGRAPHY;

EID: 33748581372     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.6462     Document Type: Article

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