A high efficiency class-F power amplifier using AlGaN/GaN HEMT

Microwave and Optical Technology Letters

Volumn 48, Issue 10, 2006, Pages 1955-1957

  Ko, Sangwon ^a   Wu, Wenhsing ^a   Lin, Jenshan ^a   Jang, Soohwan ^a   Ren, Fan ^a   Pearton, Stephen ^a   Fitch, Robert ^b   Gillespie, James ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Class F power amplifier; Ga N; High efficiency; Power amplifier

Indexed keywords

CLASS-F POWER AMPLIFIER; HIGH EFFICIENCY; MICROSTRIP TOPOLOGY;

GALLIUM NITRIDE; MICROSTRIP DEVICES; POWER AMPLIFIERS; TOPOLOGY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33748474584     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.21832     Document Type: Article

References (7)

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