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Volumn 12, Issue 11, 2002, Pages 421-423

Effects of output harmonic termination on PAE and output power of AlGaN/GaN HEMT power amplifier

Author keywords

AlGaN GaN high electron mobility transistor (HEMT); Harmonic termination; Power added efficiency; Power amplifier

Indexed keywords

GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCATTERING PARAMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING;

EID: 0036860833     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2002.805532     Document Type: Article
Times cited : (14)

References (6)
  • 2
    • 0032202916 scopus 로고    scopus 로고
    • High performance AlGaN/GaN HEMT with improved ohmic contacts
    • S. J. Cai, R. Li, Y. L. Chen, L. Wong, W. G. Wu, S. G. Thomas, and K. L. Wang, "High performance AlGaN/GaN HEMT with improved ohmic contacts," Electron. Lett., vol. 34, no. 24, pp. 2354-2356, 1998.
    • (1998) Electron. Lett. , vol.34 , Issue.24 , pp. 2354-2356
    • Cai, S.J.1    Li, R.2    Chen, Y.L.3    Wong, L.4    Wu, W.G.5    Thomas, S.G.6    Wang, K.L.7
  • 3
    • 0035855799 scopus 로고    scopus 로고
    • High power wideband AlGaN/GaN feedback amplifier module with drain and feedback loop inductances
    • Y. Chung, S. Cai, W. Lee, Y. Lin, C. P. Wen, K. L. Wang, and T. Itoh, "High power wideband AlGaN/GaN feedback amplifier module with drain and feedback loop inductances," Electron. Lett., vol. 37, no. 19, pp. 1199-1200, 2001.
    • (2001) Electron. Lett. , vol.37 , Issue.19 , pp. 1199-1200
    • Chung, Y.1    Cai, S.2    Lee, W.3    Lin, Y.4    Wen, C.P.5    Wang, K.L.6    Itoh, T.7
  • 5
    • 0000385574 scopus 로고
    • A theoretical analysis and experimental confirmation of the optimally loaded and overdrive RF power amplifier
    • Dec
    • D. M. Snider, "A theoretical analysis and experimental confirmation of the optimally loaded and overdrive RF power amplifier," IEEE Trans. Electron Devices, vol. ED-14, pp. 851-857, Dec. 1967.
    • (1967) IEEE Trans. Electron Devices , vol.ED-14 , pp. 851-857
    • Snider, D.M.1
  • 6
    • 0024905517 scopus 로고
    • High efficiency power amplification for microwave and millimeter frequencies
    • W. S. Kopp and S. D. Pritchette, "High efficiency power amplification for microwave and millimeter frequencies," in IEEE MTT-S Int. Microwave Symp. Dig., vol. 3, 1989, pp. 857-858.
    • (1989) IEEE MTT-S Int. Microwave Symp. Dig. , vol.3 , pp. 857-858
    • Kopp, W.S.1    Pritchette, S.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.