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Volumn 12, Issue 11, 2002, Pages 421-423
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Effects of output harmonic termination on PAE and output power of AlGaN/GaN HEMT power amplifier
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Author keywords
AlGaN GaN high electron mobility transistor (HEMT); Harmonic termination; Power added efficiency; Power amplifier
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Indexed keywords
GATES (TRANSISTOR);
HIGH ELECTRON MOBILITY TRANSISTORS;
ION IMPLANTATION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
SCATTERING PARAMETERS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DEVICE TESTING;
HARMONIC TERMINATION;
POWER ADDED EFFICIENCY;
POWER AMPLIFIERS;
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EID: 0036860833
PISSN: 15311309
EISSN: None
Source Type: Journal
DOI: 10.1109/LMWC.2002.805532 Document Type: Article |
Times cited : (14)
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References (6)
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