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Volumn 2005, Issue , 2005, Pages 117-120

High-performance varactor diodes integrated in a silicon-on-glass technology

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; COPPER PLATING; GLASS; LASER BEAM EFFECTS; PASSIVATION; SEMICONDUCTOR DOPING; SILICON WAFERS;

EID: 33748342224     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546599     Document Type: Conference Paper
Times cited : (19)

References (7)
  • 1
    • 0038819566 scopus 로고    scopus 로고
    • Substrate transfer for RF technologies
    • March
    • R. Dekker, P. Baltus and H.G.R. Maas. Substrate Transfer for RF Technologies, IEEE TED, 50(3): 747-759, March 2003.
    • (2003) IEEE TED , vol.50 , Issue.3 , pp. 747-759
    • Dekker, R.1    Baltus, P.2    Maas, H.G.R.3
  • 2
    • 27644544348 scopus 로고    scopus 로고
    • 'Distortion Free' varactor diode topologies for RF adaptivity
    • K. Buisman, et al. 'Distortion Free' varactor diode topologies for RF adaptivity. IEEE IMS 2005.
    • IEEE IMS 2005
    • Buisman, K.1
  • 4
    • 0019611235 scopus 로고
    • Method of fabricating high-Q silicon varactor diodes
    • A. Rosen et al. Method of Fabricating High-Q Silicon Varactor Diodes. Electronics letters, Vol. 17 No. 19, 1981, pp. 707-708.
    • (1981) Electronics Letters , vol.17 , Issue.19 , pp. 707-708
    • Rosen, A.1
  • 5
    • 33751421887 scopus 로고    scopus 로고
    • Low-distortion, low-loss varactor-based adaptive matching networks, implemented in a silicon-on-glass technology
    • K. Buisman et al. Low-distortion, low-loss varactor-based adaptive matching networks, implemented in a silicon-on-glass technology. IEEE RFIC 2005.
    • IEEE RFIC 2005
    • Buisman, K.1
  • 6
    • 0034322216 scopus 로고    scopus 로고
    • Control of arsenic doping during low temperature CVD epitaxy of silicon (100)
    • W.D. van Noort, L.K. Nanver and J.W. Slotboom. Control of Arsenic Doping during Low Temperature CVD Epitaxy of Silicon (100), J ECS, 147(11): 4301-4304, 2000.
    • (2000) J ECS , vol.147 , Issue.11 , pp. 4301-4304
    • Van Noort, W.D.1    Nanver, L.K.2    Slotboom, J.W.3
  • 7
    • 33751432459 scopus 로고    scopus 로고
    • Metal/silicon Schottky barrier lowering by RTCVD interface passivation
    • Q.W. Ren, W.D. van Noort, L.K. Nanver and J.W. Slotboom. Metal/silicon Schottky barrier lowering by RTCVD interface passivation, Proc. ECS, 2000(9): 161-166, 2000.
    • (2000) Proc. ECS , vol.2000 , Issue.9 , pp. 161-166
    • Ren, Q.W.1    Van Noort, W.D.2    Nanver, L.K.3    Slotboom, J.W.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.