p-doped μc-Si:H window layers prepared by hot-wire CVD for amorphous solar cell application

Solar Energy Materials and Solar Cells

Volumn 90, Issue 18-19, 2006, Pages 3345-3355

  Kumar, P ^a   Bhusari, D ^a   Grunsky, D ^a   Kupich, M ^a   Schroeder, B ^a  

^a University of Koblenz Landau   (Germany)

Author keywords

Hotwire CVD 2; Microcrystalline Si 1; Seed layer 3

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ENERGY EFFICIENCY;

HOTWIRE CVD-2; MICROCRYSTALLINE SI-1; SEED LAYER-3;

SILICON SOLAR CELLS;

EID: 33748328098     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2005.09.016     Document Type: Article

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