High pressure Raman studies on n-GaAs

Journal of Materials Science Letters

Volumn 20, Issue 1, 2001, Pages 5-7

  Varandani, D ^a   Dilawar, N ^a   Chakraborty, B R ^a   Singh, D ^a   Bandyopadhyay, A K ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; CARRIER CONCENTRATION; LATTICE VIBRATIONS; PRESSURE EFFECTS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RAYLEIGH SCATTERING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

PHONON-PLASMON COUPLING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034819001     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1006733924751     Document Type: Article

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