Effect of growth interruption on optical properties of In-rich InGaN/GaN single quantum well structures

Journal of Applied Physics

Volumn 100, Issue 4, 2006, Pages

  Sun, Yuanping ^a,b   Cho, Yong Hoon ^b   Kim, H M ^c   Kang, T W ^c   Kwon, S Y ^d   Yoon, E ^d  

^a YANTAI UNIVERSITY   (China)

^b Chungbuk National University   (South Korea)

^c Dongguk University   (South Korea)

^d Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; ELECTRIC EXCITATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS;

GROWTH INTERRUPTION (GI); PL EXCITATION (PLE);

GALLIUM NITRIDE;

EID: 33748290364     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2220514     Document Type: Article

References (12)

1. I. Akasaki, H. Amano, Y. Koide, K. Hiramnatsu, and N. Sawaki, J. Cryst. Growth 98, 209 (1989).
2. S. Nakamura, S. Pearton, and G. Fasol, The Blue Laser Diode (Springer, Berlin, 2000).
3. M. Yoshimoto, H. Yamamoto, W. Huang, H. Harima, J. Saraie, A. Chayahara, and Y. Horino, Appl. Phys. Lett. 83, 3480 (2003).
4. S.-Y. Kwon et al., Phys. Status Solidi C 0, 2830 (2003).
5. S.-Y. Kwon et al., Appl. Phys. Lett. 86, 192105 (2005).
6. H. J. Kim et al., Curr. Appl. Phys. 3, 351 (2003).
7. S.-Y. Kwon, H. J. Kim, B. Kee, H. Na, and E. Yoon, Phys. Status Solidi C 0, 405 (2002).
8. S.-Y. Kwon et al., Phys. Status Solidi A 201, 2818 (2004).
9. Y. Sun, Y.-H. Cho, E.-K. Suh, H. J. Lee, R. J. Choi, and Y. B. Hahn, Appl. Phys. Lett. 84, 49 (2004).
10. S. Weber, W. Limmer, K. Thonke, P. Sauser, K. Panzlaff, G. Bacher, H. P. Meier, and P. Roentgen, Phys. Rev. B 52, 14739 (1995).
11. Y. Narukawa, Y. Kawakami, S. Fujita, and S. Nakamura, Phys. Rev. B 59, 10283 (1999).
12. S. Nakamura, Mater. Sci. Eng., B 50, 272 (1997).