Low-temperature silicon wafer bonding based on Ti/Si solid-state amorphization

Applied Physics Letters

Volumn 89, Issue 9, 2006, Pages

  Yu, Jian ^a   Wang, Yinmin ^b   Lu, Jian Qiang ^a   Gutmann, Ronald J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY-LOSS SPECTROMETRY; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SILICON WAFER BONDING; TI/SI-BASED WAFER BONDING TECHNIQUE;

AMORPHIZATION; BONDING; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONS; ENERGY DISSIPATION; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY;

SILICON WAFERS;

EID: 33748261436     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2338574     Document Type: Article

References (20)

1. Q.-Y. Tong and U. Gösele, Semiconductor Wafer Bonding: Science and Technology (Wiley, New York, 1999), pp. 263-268.
2. A. Plößl and G. Kräuter, Mater. Sci. Eng., R. 25, 1 (1999).
3. M. A. Schmidt, Proc. IEEE 86, 1575 (1998).
4. R. J. Gutmann, J.-Q. Lu, S. Pozder, Y. Kwon, D. Menke, A. Jindal, M. Celik, M. Rasco, J. J. McMahon, K. Yu, and T. S. Cale, in Advanced Metallization Conference 2003 (AMC 2003), edited by G. W. Ray, T. Smy, T. Ohta, and M. Tsujimura, MRS Proceedings Vol. V-19 (Materials Research Society, Warrendale, PA, 2004), pp. 19-26.
5. K. N. Chen, A. Fan, and R. Reif, J. Mater. Sci. 37, 3441 (2002).
6. C. S. Tan, A. Fan, K. N. Chen, and R. Reif, Appl. Phys. Lett. 82, 2649 (2003).
7. P. Amirfeiz, S. Bengtsson, M. Bergh, E. Zanghellini, and L. Borjesson, J. Electrochem. Soc. 147, 2693 (2000).
8. E. Andideh, T. Scherban, B. Sun, J. Blaine, C. Block, and B. Jin, Proceedings of the IEEE 2001 International Interconnect Technology Conference (IEEE, Piscataway, NJ, 2001), pp. 257-259.
9. C. J. Smithell and E. A. Brandes, Metals Reference Book, 5th. ed. (Butterworths, London, 1976), p. 867.
10. D. A. Porter and K. E. Easterling, Phase Transformation in Metals and Alloys (CRC, Boca Raton, FL, 1992), pp. 78, 99.
11. S. P. Murarka, Suicides for VLSI Applications (Academic, New York, 1983). pp. 77.
12. R. Butz, G. W. Rubloff, and P. S. Ho, J. Vac. Sci. Technol. A 1, 771 (1983).
13. J. D. Fast, Interaction of Metals and Gases: Thermodynamics and Phase Relations (Academic, New York, 1965), pp. 198-235.
14. P. Merchant and J. Amano, J. Vac. Sci. Technol. B 2, 762 (1984).
15. J. Yu, Ph.D. thesis, Rensselaer Polytechnic Institute, 2006.
16. L. J. Chen, Mater. Sci. Eng., R. 29, 115 (2000).
17. K. Holloway and R. Sinclair, J. Appl. Phys. 61, 1359 (1987).
18. R. B. Schwarz and W. L. Johnson, Phys. Rev. Lett. 51, 415 (1983).
19. J. Raisanen and J. Keinonen, Appl. Phys. Lett. 49, 773 (1986).
20. K. Graff, Metal Impurities in Silicon-Device Fabrication (Springer, New York, 1994), p. 28.