Sharp-line electroluminescence from individual quantum dots by resonant tunneling injection of carriers

Applied Physics Letters

Volumn 89, Issue 9, 2006, Pages

  Turyanska, L ^a   Baumgartner, A ^a   Chaggar, A ^a   Patane A ^a   Eaves, L ^a   Henini, M ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; LIGHT EMISSION; MORPHOLOGY; RESONANT TUNNELING; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

CARRIER ENERGY RELAXATION; INAS QUANTUM DOTS; P-DOPED GAAS LAYERS; P-I-N DIODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33748261392     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2337540     Document Type: Article

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