The origin of the electrical inactivity of iron and tin impurity atoms in crystalline and vitreous alloys AIIIBIV (A = Ga, In; B = Te, S)

Glass Physics and Chemistry

Volumn 32, Issue 4, 2006, Pages 412-417

  Castro, R A ^a   Nasredinov, F S ^a  

^a HERZEN STATE PEDAGOGICAL UNIVERSITY OF RUSSIA   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; FERMI LEVEL; GALLIUM; GLASS; INDIUM; SULFUR; TELLURIUM;

BAND GAP; CHALCOGENIDE GLASSES; ELECTRICAL INACTIVITY; IONIZED ACCEPTORS;

CRYSTALLINE MATERIALS;

EID: 33747889260     PISSN: 10876596     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1087659606040043     Document Type: Article

References (5)

1. 56.5, Proceedings of the VII International Conference on the Properties and Applications of Dielectric Materials, Nagoya, Japan, 2003, pp. 800-802.
2. 3 Layers, Fiz. Khim. Stekla, 1997, vol. 23, no. 6, pp. 643-645
3. [Glass Phys. Chem. (Engl. transl.), 1997, vol. 23, no. 6, pp. 455-456].
4. Seregin, P.P., Fizicheskie osnovy messbauerovskoi spektroskopii (The Physical Principles of Mössbauer Spectroscopy), St. Petersburg: St. Petersburg State Pedagogical University, 2002.
5. Seregin, N.P., Seregin, P.P., Nemov, S.A., and Yanvareva, A.Yu., Antistructural Defects in Lead Chalcogenides, J. Phys.: Condens. Matter, 2003, vol. 15, pp. 7591-7597.