Antistructural defects in lead chalcogenides

Journal of Physics Condensed Matter

Volumn 15, Issue 44, 2003, Pages 7591-7597

  Seregin, N P ^a   Seregin, P P ^b   Nemov, S A ^b   Yanvareva, A Yu ^b  

^a INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

^b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; FERMI LEVEL; IMPURITIES; ISOTOPES; MOSSBAUER SPECTROSCOPY; NEGATIVE IONS; POSITIVE IONS;

ANION SUBLATTICES; ANTISTRUCTURAL DEFECTS; CATION SUBLATTICES; LEAD CHALCOGENIDES; RADIOACTIVE CONVERSION;

LEAD COMPOUNDS;

EID: 0345283353     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/15/44/012     Document Type: Article

References (3)

1. Ravich Yu I, Efimova B A and Smimov I A 1968 Methods of Investigation of Semiconductors in Application to Lead Chalcogenides (Moscow: Nauka) (in Russian)
2. Masterov V F, Nasredinov F S, Nemov S A and Seregin P P 1996 Fiz. Tekh. Poluprovodn. 30 840
3. Masterov V F, Nasredinov F S, Nemov S A and Seregin P P 1996 Semiconductors 30 450 (Engl. Transl.)