Prospects on Mn-doped ZnGeP2 for spintronics

Microelectronics Reliability

Volumn 46, Issue 9-11, 2006, Pages 1747-1749

  Krivosheeva, A V ^a,b   Shaposhnikov, V L ^a   Lyskouski, V V ^a   Borisenko, V E ^a   d'Avitaya, F Arnaud ^b   Lazzari, J L ^b  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; IMPURITIES; MAGNETIC PROPERTIES; MANGANESE; PYRITES; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR MATERIALS;

MAGNETIC IMPURITIES; SPINTRONICS; TERNARY SEMICONDUCTORS;

DOPING (ADDITIVES);

EID: 33747804941     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.08.006     Document Type: Article

References (8)

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5. 2-Mn chalcopyrite system. J Cryst Growth 236 (2002) 609
6. 2 chalcopyrite semiconductors. Phys Rev B 65 (2002) 094415
7. 2. Solid State Commun 129 (2004) 609
8. Kresse G., and Furthmüller J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys Rev B 54 16 (1996) 11169