Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development

Microelectronics Reliability

Volumn 46, Issue 9-11, 2006, Pages 1530-1535

  Courtas, S ^a   Gregoire M ^b   Federspiel, X ^a   Bicais Lepinay N ^b   Wyon, C ^c  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; DIFFRACTION; ELECTRONS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; OPTICAL RESOLVING POWER; SCANNING ELECTRON MICROSCOPY; TECHNOLOGY TRANSFER; TEXTURES;

ELECTRON BACKSCATTERED DIFFRACTION (EBSD); METAL TEXTURE; TEXTURE CHARACTERIZATION; WAFERS;

ELECTRON SCATTERING;

EID: 33747794303     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.07.031     Document Type: Article

References (6)

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2. Lee S-J et al. New Insight into Stress Induced Voiding Mechanism in Cu Interconnects. IITC 2005.
3. Grégoire M., et al. Thermomechanical behavior and properties of Passivated PVD and ECD Cu thin films. Mat Res Soc Symp, Proc 875 (2005) O4.5
4. Joubert P., et al. The effect of low pressure on the structure of LPCVD polycristalline silicon films. J Electrochem Soc 134 10 (1987) 2541-2545
5. Federspiel X, Grégoire M. Multimodal analysis of stress induced degradation of 90nm node interconnects. IEEE IRPS 2006.
6. Ogawa ET et al. Stress-Induced Voiding Under Vias Connected To Wide Cu Metal Leads. IEEE IPRS 2002.