High-sensitivity, quasi-optically-coupled semimetal-semiconductor detectors at 104 GHz

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6212, Issue , 2006, Pages

  Brown, E R ^a   Kazemi, H ^b   Young, A C ^a   Zimmerman, J D ^a   Wilkinson, T L J ^a   Bjarnason, J E ^a   Hacker, J B ^b   Gossard, A C ^a  

^a University of California   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

ErAs InGaAlAs rectifier diodes; Gunn diode oscillator; Noise equivalent power (NEP); Optical responsivity; Schottky diodes; Semimetal semiconductor detectors; Square spiral antennas

Indexed keywords

ERAS-INGAALAS RECTIFIER DIODES; GUNN DIODE OSCILLATORS; NOISE-EQUIVALENT POWER (NEP); OPTICAL RESPONSIVITY; SCHOTTKY DIODES; SEMIMETAL-SEMICONDUCTOR DETECTORS; SQUARE-SPIRAL ANTENNAS;

ANTENNAS; ELECTRIC ATTENUATORS; ELECTRIC RECTIFIERS; ERBIUM COMPOUNDS; OPTICAL ENGINEERING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DIODES;

DETECTORS;

EID: 33747638078     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.666473     Document Type: Conference Paper

References (8)

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4. J. D. Zimmerman, E. R. Brown, and A. C. Gossard, "Tunable all epitaxial semimetal-semiconductor Schottky diode system: ErAs on InAlGaAs" J. Vac. Sci. Tech. B., vol. 23(5), pp. 1929-1935, (2005.
5. H. Kazemi, J.D. Zimmennan, E.R. Brown, A.C. Gossard, G.D. Boreman, J.B. Hacker, B. Lail, and C. Middleton, "First MMW Characterization of ErAs/InAlGaAs/InP Semimetal-Semiconductor Schottky (S3) Detectors for Passive Millimeter-wave and Infrared Imaging" Proc. of SPIE, Vol. 5789, paper 11, 2005.
6. TPX is a registered trademark of Mitsui Petrochemical Industries, Ltd.
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