Dual (n+/p+) polycide interconnect technology using poly-Si/WSi2/poly-Si structure and post B+ implantation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 845-848

  Fujii, T ^a   Hashimoto, S ^a   Naito, Y ^a   Hirofuji, Y ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; INTEGRATED CIRCUIT INTERCONNECTS; POLYCRYSTALLINE MATERIALS;

CMOS CIRCUITS; HIGH TEMPERATURE PROCESS; INTERCONNECT TECHNOLOGY; LOW RESISTANCE; POLYCIDE;

C (PROGRAMMING LANGUAGE);

EID: 33747635750     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307489     Document Type: Conference Paper

References (6)

1. F. C. Shone, K. C. Saraswa1, and J. D. Pluminer. "Formation of 0. 1 pm N+/P and P+/N junctions by doped silicide technology, " IEDM Tech. Dig., 407, 1985.
2. F. C. Shone, S. E. Hansen. D. B. Kao, K. C. Saraswat, and J. D. Plummer, "Modeling dopant redistribution in Si02 / WSiz / Si structure, " IEDM Tech. Dig., 534, 1986.
3. V. Probst, H. Schaber, A. Mitwalsky, H. Kabza, L. Van den hove, and K. Maex "WSi2 and CoSiz as diffusion sourccs for shallow-junction formation in silicon, " J. Appl. Phys. V01. 70, 708, 1901
4. S. J. Hillenius, R. Liu, G. E. Georgiou, R. L. Field, D. S. Williams, A. Kornblit, D. M. Boulin, R. L. Johnston, and W. T. Lynch, "A symmetric sub micron CMOS lechnology. " IEDM Tech. Dig., 252. 1986
5. C. L. Chu, K. C. Saraswat, and S. S. Wong, "Characterization of lateral dopant diffusion in silicides. " IEDM Tech. Dig., 245, 1990
6. K. Suzuki, H. Horie, Y. Yainashita, and Y. Kalaoka "Diffusion coefficient of boron in tungsten silicide, "AppLPhys. Lett., Vo1. 57. 1018, 1990