"Non-destructive" B, P and As dosimetry using normal incidence oxygen

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 7269-7271

  Maul, Hans ^a   Ehrke, H Ulrich ^a   Loibl, Norbert ^a   Schnürer Patschan, Christoph ^a  

^a CAMECA   (United States)

Author keywords

Dose monitoring; Full wafer; Non destructive; Normal incidence; Oxygen; SIMS

Indexed keywords

ION BOMBARDMENT; MAPPING; NANOSTRUCTURED MATERIALS; OXIDATION; SILICON;

DOSE MONITORING; FULL WAFER; NON-DESTRUCTIVE; NORMAL INCIDENCE;

SECONDARY ION MASS SPECTROMETRY;

EID: 33747313905     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.181     Document Type: Article

References (2)

1. Maul J.L., Patel S.B., Sears A., Loibl N., Bögl L., and Dowsett M.G. SIMS XII (2000), Elsevier p. 237
2. Ehrke U., Sears A., Lerch W., Paul S., Roters G., Downey D.F., and Arevalo E.A. J. Vac. Sci. Technol. B 22 1 (2004) 346