Analysis of d.c. characteristics of GaAlAsGaAs double heterojunction bipolar transistors

Solid State Electronics

Volumn 29, Issue 2, 1986, Pages 141-149

  Ankri, D ^a   Azoulay, R ^a   Caquot, E ^a   Dangla, J ^a   Dubon, C ^a   Palmier, J F ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, DIGITAL; SEMICONDUCTING GALLIUM COMPOUNDS;

DOPING PROFILE; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH-SPEED DIGITAL INTEGRATED CIRCUITS; INTERFACE PARAMETERS; METALORGANIC VAPOR PHASE EPITAXY;

TRANSISTORS, BIPOLAR;

EID: 0022659211     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(86)90032-8     Document Type: Article

References (14)

1. Double heterojunction NpN GaAlAs/GaAs bipolar transistor
2. Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistor
3. Medium-power GaAs bipolar transistors