Single shot and burst repetitive operation of involute gate 125 mm symmetric thyristors up to 221 kA with a di/dt of 2.0 kA/μs

IEEE Transactions on Plasma Science

Volumn 28, Issue 5, 2000, Pages 1524-1527

  Podlesak, Thomas F ^a   Schneider, Sol ^a   Simon, Frank M ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Di dt; Involute gate; Thermal effect; Thyristor

Indexed keywords

EID: 33747276425     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/27.901226     Document Type: Article

References (3)

1. H.J. Boenig, J. W. Schwartzenberg, L. J. Willinger, and D. E. Piccone, et al., "Design and testing of high power, repetitively pulsed, solid state closing switches,"in Conf. Rec. IEEE Industry Applications Conf., 1997, pp. 1022-1028.
2. E. Spahn, G. Buderer, and F. Hatheor, "Compact 50 kJ pulse forming unit switched by semiconductors," IEEE Trans. Magn., vol. 31, pp. 74-83, Jan. 1995.
3. E. Spahn, G. Buderer, and E. Ramezani, "High-voltage switch for pulse power applications," in Conf. Rec. Twenty- first Int. Power Modulator Symp., Costa Mesa, CA, 1994, pp. 93-96.