Quantitative analysis of surface contaminants on silicon wafers by means of TOF-SIMS

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 7255-7257

  Rostam Khani, P ^a   Philipsen, J ^a   Jansen, E ^a   Eberhard, H ^a   Vullings, P ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

ICP MS; Quantification; RSF; TOF SIMS; Trace metals; VPD

Indexed keywords

CONTAMINATION; DECOMPOSITION; INDUCTIVELY COUPLED PLASMA; SECONDARY ION MASS SPECTROMETRY; SURFACE REACTIONS;

INDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY (ICP-MS); QUANTIFICATION; RELATIVE SENSITIVITY FACTORS (RSF); TOF-SIMS; TRACE METALS; VAPOUR PHASE DECOMPOSITION (VPD);

SILICON WAFERS;

EID: 33747176589     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.265     Document Type: Article

References (7)

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