Practical application of diffusion pathway analysis for SiC-metal reactions

Metals and Materials International

Volumn 12, Issue 3, 2006, Pages 231-238

  Park, J S ^a,b   Cho, J ^b   Yi, S ^c   Perepezko, J H ^d  

^a Yonsei University   (South Korea)

^b Korea Institute of Industrial Technology ^*  (South Korea)

^c Kyungpook National University   (South Korea)

^d UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

Diffusion pathway; Interface design; Interface reactions

Indexed keywords

MORPHOLOGY; REACTION KINETICS; SILICON; SILICON CARBIDE; SILICON COMPOUNDS;

CHEMICAL POTENTIAL DIAGRAMS; DIFFUSION PATHWAYS; INTERFACE DESIGNS; INTERFACE MORPHOLOGIES; INTERFACE REACTIONS; INTERLAYER MATERIALS; PHASE MORPHOLOGY; REACTION PATHWAYS;

DIFFUSION;

EID: 33747139777     PISSN: 15989623     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03027536     Document Type: Article

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