Molecular modeling of low-k films of carbon-doped silicon oxides for theoretical investigations of the mechanical and dielectric properties

Applied Physics Letters

Volumn 89, Issue 6, 2006, Pages

  Tajima, N ^a   Ohno, T ^a   Hamada, T ^b   Yoneda, K ^c   Kobayashi, N ^c   Hasaka, S ^d   Inoue, M ^d  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^d TAIYO NIPPON SANSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS ALLOYS; CARBON; DIELECTRIC PROPERTIES; MOLECULAR STRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYMERS; SEMICONDUCTOR DOPING; SILICON COMPOUNDS;

CROSS LINKS.; FILM STRUCTURES; MOLECULAR MODELING; SILICON OXIDES;

THIN FILMS;

EID: 33747133676     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2336273     Document Type: Article

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