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Volumn 483-485, Issue , 2005, Pages 981-984
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Demonstration of high-power X-band oscillation in p+/n -/n+ 4H-SiC IMPATT diodes with guard-ring termination
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Author keywords
Guard ring; IMPATT; Oscillation; SiC; X band
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Indexed keywords
ELECTRIC BREAKDOWN;
ION IMPLANTATION;
SILICON CARBIDE;
AVALANCHE BREAKDOWN;
GUARD-RING;
PEAK OUTPUT POWER;
SCHOTTKY BARRIER DIODES;
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EID: 33747125591
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/0-87849-963-6.981 Document Type: Conference Paper |
Times cited : (10)
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References (7)
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