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Volumn 483-485, Issue , 2005, Pages 981-984

Demonstration of high-power X-band oscillation in p+/n -/n+ 4H-SiC IMPATT diodes with guard-ring termination

Author keywords

Guard ring; IMPATT; Oscillation; SiC; X band

Indexed keywords

ELECTRIC BREAKDOWN; ION IMPLANTATION; SILICON CARBIDE;

EID: 33747125591     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.981     Document Type: Conference Paper
Times cited : (10)

References (7)
  • 1
    • 35148857220 scopus 로고
    • Second Edition, J. Willey, New York , Chapter 10
    • S. M. Sze: Physics of Semiconductor Devices, Second Edition, J. Willey, New York (1981), Chapter 10, 592-636.
    • (1981) Physics of Semiconductor Devices , pp. 592-636
    • Sze, S.M.1
  • 4
    • 35148875667 scopus 로고    scopus 로고
    • C. C. Meng and G. Z. Liao: MTT-S Digest, (1997), 963-965
    • C. C. Meng and G. Z. Liao: MTT-S Digest, (1997), 963-965


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.