Reduction in double-positioning boundaries in 3C-SiC epitaxial films fabricated on Si (111) substrates

Thin Solid Films

Volumn 513, Issue 1-2, 2006, Pages 307-310

  Kusumori, Takeshi ^a   Muto, Hachizo ^a   Okada, Masahisa ^a   Jin, Ping ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Cubic silicon carbide (3C SiC); Double positioning boundary (DPB); Pulsed laser deposition (PLD); X ray diffraction (XRD)

Indexed keywords

CRYSTAL STRUCTURE; ELECTRONS; GALLIUM NITRIDE; PULSED LASER DEPOSITION; SUBSTRATES; SURFACE CLEANING; THIN FILMS; X RAY DIFFRACTION;

CUBIC SILICON CARBIDE (3C-SIC); DOUBLE-POSITIONING BOUNDARY (DPB); PULSED-LASER DEPOSITION (PLD); WIDE BAND GAP SEMICONDUCTORS;

SILICON CARBIDE;

EID: 33747026727     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.01.071     Document Type: Article

References (16)

1. Sasaki T., and Matsuoka T. J. Appl. Phys. 64 (1988) 4531
2. Amano H., Sawaki N., Akasaki I., and Toyoda Y. Appl. Phys. Lett. 48 (1986) 353
3. Takeuchi T., Amano H., Hiramatsu K., Sawaki N., and Akasaki I. J. Cryst. Growth 115 (1991) 634
4. Basu S.N., Lei T., and Moustakas T.D. J. Mater. Res. 9 (1994) 2370
5. Kong H.S., Jiang B.L., Glass J.T., Rozgonyi G.A., and More K.L. J. Appl. Phys. 63 (1988) 2645
6. Stowell M.J. In: Matthews J.W. (Ed). Epitaxial Growth, Part B (1975), Academic Press, New York 465
7. Chien F.R., Nutt S.R., Yoo W.S., Kimoto T., and Matsunami H. J. Mater. Res. 9 (1994) 940
8. Wahab Q., Glass R.C., Ivanov I.P., Birch J., Sundgren J.-E., and Willander M. J. Appl. Phys. 74 (1993) 1663
9. Nishino K., Kimoto T., and Matsunami H. Jpn. J. Appl. Phys. 36 (1997) 5202
10. Yoshinobu T., Mitsui H., Izumikawa I., Fuyuki T., and Matsunami H. Appl. Phys. Lett. 60 (1992) 824
11. Powell J.A., Petit J.B., Edgar J.H., Jenkins I.G., Matus L.G., Yang J.W., Pirouz P., Choyke W.J., Clemen L., and Yoganathan M. Appl. Phys. Lett. 59 (1991) 333
12. Nakamura M., Isshiki T., Nishiguchi T., Nishio K., Ohshima S., and Nishino S. Mat. Sci. Forum 483-485 (2005) 181
13. Kern W., and Puotinen D.A. RCA Rev. 31 (1970) 187
14. Ishizaka A., and Shiraki Y. J. Electrochem. Soc. 133 (1986) 666
15. Henderson R.C. J. Electrochem. Soc. 119 (1972) 772
16. Kusumori T., Muto H., and Brito M.E. Appl. Phys. Lett. 84 (2004) 1272