Suppression mechanism of double positioning growth in 3C-SiC(111) crystal by using an off-axis Si(110) substrate

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 181-184

  Nakamura, M ^a   Isshiki, T ^a   Nishiguchi, T ^a   Nishio, K ^a   Ohshima, S ^a   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

3C SiC; Double positioning growth; Hetero epitaxial CVD; HRTEM

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEFECT DENSITY; HIGH RESOLUTION ELECTRON MICROSCOPY; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES;

DEFECTS FORMATION; DOUBLE POSITIONING GROWTH; GROWTH MODELS;

CRYSTAL GROWTH;

EID: 33746981916     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.181     Document Type: Conference Paper

References (4)

1. T. Nishiguchi, M. Nakamura, K. Nishio, T. Isshiki and S. Nishino: Appl. Phys. Lett. 84 (2004), 3082
2. T. Isshiki, M. Nakamura, T. Nishiguchi, K. Nishio, Y. Mukai, S. Ohshima and S. Nishino: Proc. 8th Asia-Pacific Conference on Electron Microscopy, 2004, Kanazawa, Japan, p. 489
3. T. Nishiguchi, M. Nakamura, K. Nishio, T. Isshiki, S. Ohshima and S. Nishino: in this volume
4. P. Heuell, M. A. Kulakov, and B. Bullemer: Silicon Carbide and Related Materials, (Institute of Physics, Bristol, 1994) p.353