Enhanced low field magnetoresistance in La0.7Sr 0.3MnO3/TiO2 composite

Journal of Physics D: Applied Physics

Volumn 39, Issue 16, 2006, Pages 3531-3535

  Gaur, Anurag ^a   Varma, G D ^a   Singh, H K ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY ROORKEE   (India)

^b NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITE MATERIALS; GRAIN BOUNDARIES; LANTHANUM COMPOUNDS; MAGNETIZATION; RATE CONSTANTS; SOLID STATE DEVICE STRUCTURES; X RAY DIFFRACTION;

LOW FIELD MAGNETORESISTANCE (LFMR); METAL-INSULATOR TRANSITION TEMPERATURE; SOLID-STATE REACTION PROCESS; SPIN-POLARIZED TUNNELLING;

MAGNETORESISTANCE;

EID: 33746928356     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/16/002     Document Type: Article

References (23)

1. Von Helmolt R, Wecker J, Holzapfel B, Schultz L and Samwer K 1993 Phys. Rev. Lett. 71 2331
2. Rao C N R, Mahesh R, Raychaudhuri A K and Mahendiran R 1998 J. Phys. Chem. Solids 59 487
3. Jin S, Teifel T H, McCormack M, Fastnacht R A, Ramesh R and Chen L H 1994 Science 264 413
4. Hwang H Y, Cheong S W, Ong N P and Batlogg B 1996 Phys. Rev. Lett. 77 2041
5. Gupta A, Gong G Q, Xiao G, Duncombe P R, Ttouilloud P, Lecoeur P, Wang Y Y, Dravid V P and Sun J Z 1996 Phys. Rev. B 54 R15629
6. Wang X L, Dou S X, Liu H K, Ionescu M and Zeimetz B 1998 Appl. Phys. Lett. 73 396
7. Ziese M 2002 Rep. Prog. Phys. 65 143
8. Coey J M D, Berkowitz A E, Balcells L I, Putris F F and Parker F T 1998 Appl. Phys. Lett. 72 734
9. Guinea F 1998 Phys. Rev. B 58 9212
10. Coey J M D, Berkowitz A E, Balcells L I, Putris F F and Barry A 1998 Phys. Rev. Lett. 80 3815
11. Kumar J, Singh R K, Siwach P K, Singh H K, Singh R and Srivastava O N 2006 J. Magn. Magn. Mater. 299 155
12. Xia Z C et al 2002 J. Phys. D: Appl. Phys. 35 177
13. Balcells L I, Carrillo A E, Martinez B and Fontcuberta J 1999 Appl. Phys. Lett. 74 4014
14. Petrov D K, Krusin-Elbaum L, Sun J Z, Field C and Duncombe P R 1999 Appl. Phys. Lett. 75 995
15. Gupta S, Ranjit R, Mitra C, Raychaudhuri P and Pinto R 2001 Appl. Phys. Lett. 78 362
16. Liu J M, Li J, Huang Q, You L P, Wang S J, Ong C K, Wu Z C, Liu Z G and Du Y W 2000 Appl. Phys. Lett. 76 2286
17. Shlyakhtin O A, Shin K H and Oh Young-Jei 2002 J. Appl. Phys. 91 7403
18. Yan C-H, Xu Z-G, Zhu T, Wang Z-M, Cheng F-X, Huang Y-H and Liao C-S 2000 J. Appl. Phys. 87 5588
19. Koster S A, Moshnyaga V, Samwer K, Lebedev O I, Tendeloo G Van, Shapoval O and Belenchuk A 2002 Appl. Phys. Lett. 81 1648
20. Huang B-x, Liu Y-h, Zhang R-z, Xiaobo-Y, Wang C-j and Mei L-m 2003 J. Phys. D: Appl. Phys. 36 1923
21. Sadakale S N, Choudhary R J, Sahasrabudhe M S, Banpurkar A G, Adhi K P, Patil S I and Date S K 2005 J. Magn. Magn. Mater. 286 450
22. Rubinstein M 2000 J. Appl. Phys. 87 5019
23. Andres A de, Garcia-Hernandez M, Martinez J L and Prieto C 1999 Appl. Phys. Lett. 74 3884