Doping of interfaces in (La0.7Sr0.3MnO 3)1-x:(MgO)x composite films

Applied Physics Letters

Volumn 81, Issue 9, 2002, Pages 1648-1650

  Koster S A ^a   Moshnyaga, V ^a   Samwer, K ^a   Lebedev, O I ^b   Tendeloo, G Van ^b   Shapoval, O ^c   Belenchuk, A ^c  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b UNIVERSITY OF ANTWERP   (Belgium)

^c INSTITUTE OF APPLIED PHYSICS   (Moldova)

Author keywords

[No Author keywords available]

Indexed keywords

AEROSOL DEPOSITION; COLUMNAR GROWTH; COMPOSITE THIN FILMS; ELECTRICAL TRANSPORT; LOW-FIELD MAGNETORESISTANCE; METAL-ORGANIC; METALLIC BEHAVIORS; PURE FILMS; RESIDUAL RESISTIVITY; SPIN-POLARIZED TUNNELING; TUNNELING BARRIER;

DEPOSITION; ELECTRIC RESISTANCE; MAGNETOELECTRONICS; MAGNETORESISTANCE; MANGANESE OXIDE; SEMICONDUCTOR DOPING; TUNNEL JUNCTIONS;

COMPOSITE FILMS;

EID: 79956051600     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1503849     Document Type: Article

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