Fast photoluminescence decay processes of doped ZnS phosphors at low temperature

Physica B: Condensed Matter

Volumn 382, Issue 1-2, 2006, Pages 38-44

  Bhatti, H S ^a   Sharma, Rajesh ^b   Verma, N K ^c  

^a PUNJABI UNIVERSITY   (India)

^b Institute of Engineering and Emerging Technologies   (India)

^c THAPAR UNIVERSITY   (India)

Author keywords

Excited state lifetimes; Laser induced photoluminescence; Quencher impurities; UV laser excitation; ZnS:Mn phosphors

Indexed keywords

DOPING (ADDITIVES); LASERS; PHOSPHORS; RADIATION; TEMPERATURE DISTRIBUTION; X RAY DIFFRACTION ANALYSIS; ZINC SULFIDE;

EXCITED STATE LIFETIMES; LASER-INDUCED PHOTOLUMINESCENCE; NITROGEN TEMPERATURE; QUENCHER IMPURITIES; UV LASER EXCITATION; ZNS:MN PHOSPHORS;

PHOTOLUMINESCENCE;

EID: 33746904721     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2006.01.536     Document Type: Article

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