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Volumn 8, Issue 7, 2006, Pages 773-781

Breaking the Zintl rule: High-pressure synthesis of binary EuSi 6 and its ternary derivative EuSi 6-xGa x (0 ≤ x ≤ 0.6)

Author keywords

Electron excess compounds; Electron localization function; Europium; High pressure; Silicon

Indexed keywords

ELECTRON EXCESS COMPOUNDS; ELECTRON LOCALIZATION FUNCTION; HIGH PRESSURE; POLYANION;

EID: 33746868330     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solidstatesciences.2006.04.003     Document Type: Article
Times cited : (34)

References (33)
  • 2
    • 33746908761 scopus 로고    scopus 로고
    • J. Llanos, PhD Thesis, University of Stuttgart, 1984
  • 15
    • 33746893659 scopus 로고    scopus 로고
    • O. Jepsen, A. Burkhardt, O.K. Andersen, The program TB-LMTO-ASA, version 4.7, Max-Planck-Institut für Festkörperforschung, Stuttgart, 1999
  • 20
    • 33746930099 scopus 로고    scopus 로고
    • M. Kohout, Basin. Version 2.3, Max-Planck-Institut für Chemische Physik fester Stoffe, Dresden, 2001


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.