Temperature dependent low energy electron microscopy study of Ge growth on Si(1 1 3)

Applied Surface Science

Volumn 252, Issue 15, 2006, Pages 5321-5325

  Clausen, T ^a   Schmidt, Th ^a   Flege, J I ^a   Locatelli, A ^b   Mentes, T O ^b   Heun, S ^c   Guo, F Z ^d   Falta, J ^a  

^a UNIVERSITY OF BREMEN   (Germany)

^b SINCROTRONE TRIESTE   (Italy)

^c LABORATORIO TASC   (Italy)

^d NONE   (Japan)

Author keywords

Epitaxial growth; Ge; LEED; LEEM; Si(1 1 3)

Indexed keywords

CRYSTAL GROWTH; DIFFUSION; LOW ENERGY ELECTRON DIFFRACTION; NUCLEATION; SILICON; THERMAL EFFECTS;

GE ADATOM DIFFUSION BARRIER; GE ISLANDS; LEEM; SI(1 1 3);

GERMANIUM;

EID: 33746805833     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.12.021     Document Type: Article

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