TL, OSL, Raman spectroscopy and SEM characterization of boron doped diamond films

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 11, 2005, Pages 2154-2159

  Pedroza Montero, M ^a   Chernov, V ^a   Castaneda B ^a   Melendrez R ^a   Goncalves J A N ^b   Sandonato, G M ^b   Bernal, R ^a   Cruz Vazquez C ^a   Brown, F ^a   Cruz Zaragoza, E ^c   Barboza Flores, M ^a  

^a UNIVERSIDAD DE SONORA   (Mexico)

^b INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

^c UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

HOT FILAMENT CHEMICALLY VAPOR DEPOSITED (HFCVD); KINETIC PARAMETERS; MONOCRYSTALLINE SILICON; OPTICALLY STIMULATED LUMINESCENCE (OSL);

BORON; CHEMICALLY SENSITIVE FIELD EFFECT TRANSISTORS; COMPUTER SIMULATION; DOPING (ADDITIVES); IRRADIATION; PARAMETER ESTIMATION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; THERMOLUMINESCENCE;

DIAMOND FILMS;

EID: 33746449261     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200561917     Document Type: Conference Paper

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