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Volumn 3, Issue , 2006, Pages 1725-1728
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Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by X-ray photoemission spectro-microscopy
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Author keywords
[No Author keywords available]
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Indexed keywords
AR ION SPUTTERING;
DOPANTS;
SEGREGATION TENDENCY;
SURFACE SEGREGATION;
64.75.+G;
68.55.LN;
81.15.KK;
82.80.EJ;
SURFACE ENRICHMENT;
THREE-FOLD SYMMETRY;
X RAY PHOTOEMISSION SPECTROSCOPY;
X-RAY PHOTOEMISSIONS;
DOPING (ADDITIVES);
GALLIUM NITRIDE;
MAGNESIUM PRINTING PLATES;
METALLORGANIC VAPOR PHASE EPITAXY;
MICROSCOPIC EXAMINATION;
PHOTOEMISSION;
SEMICONDUCTING SILICON;
SPUTTERING;
CRACKS;
PHOTOELECTRON SPECTROSCOPY;
SILICON;
SURFACE SEGREGATION;
THIN FILMS;
DOPING (ADDITIVES);
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EID: 33746429548
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200565437 Document Type: Conference Paper |
Times cited : (6)
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References (9)
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