Growth of ternary and quaternary cubic Ill-nitrides on 3C-SiC substrates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1604-1607

  Schormann J ^a   Potthast, S ^a   Schnietz, M ^a   Li, S F ^a   As, D J ^a   Lischka, K ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CUBIC ILL-NITRIDES; OPTIMUM GROWTH CONDITIONS; QUANTUM WELL STRUCTURES; SATELLITE PEAKS; 61.14.HG; 61.66.DK; 68.65.FG; 81.15.HI; HIGH ENERGY ELECTRON BEAMS; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; X-RAY DIFFRACTION MEASUREMENTS;

MOLECULAR BEAM EPITAXY; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; TERNARY SYSTEMS; ALUMINUM; ELECTRON BEAMS; EPITAXIAL GROWTH; GALLIUM NITRIDE; X RAY DIFFRACTION;

NITRIDES; GALLIUM ALLOYS;

EID: 33746370106     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565140     Document Type: Conference Paper

References (6)

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