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Volumn 60, Issue 23, 2006, Pages 2855-2857

A novel approach for the synthesis of 6H-SiC at a low temperature of 460 °C

Author keywords

6H SiC; Semiconductors; Supercritical carbon dioxide; X ray techniques

Indexed keywords

CARBON DIOXIDE; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SINGLE CRYSTALS; SODIUM COMPOUNDS; THERMAL EFFECTS;

EID: 33746366492     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2006.02.003     Document Type: Article
Times cited : (7)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.