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Volumn 60, Issue 23, 2006, Pages 2855-2857
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A novel approach for the synthesis of 6H-SiC at a low temperature of 460 °C
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Author keywords
6H SiC; Semiconductors; Supercritical carbon dioxide; X ray techniques
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Indexed keywords
CARBON DIOXIDE;
OPTICAL MICROSCOPY;
PHOTOLUMINESCENCE;
RAMAN SPECTROSCOPY;
SINGLE CRYSTALS;
SODIUM COMPOUNDS;
THERMAL EFFECTS;
6H-SIC;
SUPERCRITICAL CARBON DIOXIDES;
X-RAY TECHNIQUES;
SILICON CARBIDE;
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EID: 33746366492
PISSN: 0167577X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.matlet.2006.02.003 Document Type: Article |
Times cited : (7)
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References (22)
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