Structural transformation in PbS and HgS nanocrystals under high pressure

Modern Physics Letters B

Volumn 20, Issue 16, 2006, Pages 963-970

  Freny Joy, K M ^a   Jaya, N Victor ^a   Zhu, Jun Jie ^b  

^a ANNA UNIVERSITY   (India)

^b NANJING UNIVERSITY   (China)

Author keywords

High pressure XRD; Microwave heating; Phase transition; Semiconductors

Indexed keywords

EID: 33746363197     PISSN: 02179849     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217984906010925     Document Type: Article

References (33)

1. G. C. Hadjipanayis and R. W. Siegel (eds.), Nanophase Materials: Synthesis Properties Applications (Kluwer Academic, Dordrecht, 1994);
2. D. Fiorani and G. Sberveglieri (eds.), Fundamental Properties of Nanostructed Materials (World Scientific, Singapore, 1994).
3. M. Bruchez, Jr., M. Moronne, P. Gin, S. Weiss and A. P. Alivisatos, Science 281 (1998) 2013.
4. W. C. W. Chan and S. Nie, Science 281 (1998) 2016.
5. S. Gorer and G. Hodes, J. Phys. Chem. 98(20) (1994) 5338.
6. S. A. Empedocles, J. Phys. Chem. B 103(11) (1999) 1826.
7. B. Ludolph, M. A. Malik, P. O'Brien and N. Revaprasadu, Chem. Commun. 17 (1998) 1849-1850.
8. N. Tokyo, Jpn. Kokai Pat. 75130378 (Cl. H01L. C01B) (1975).
9. N. Tokya and K. Azkio, Jpn. Kokai Pat. 7855478 (Cl. C23C15/00) (1978).
10. N. Tokyo, J. Appl. Phys. 46 (1975) 4857.
11. Y. Wang, Acc. Chem. Res. 24(5) (1991) 133.
12. P. Gademne, Y. Yagil and G. Deutscher, J. Appl. Phys. 66 (1989) 3019.
13. Y. Xie, P. Yang and Y. T. Qian, Chem. Lett. 7 (1999) 655.
14. M. Sharon, K. S. Ramaiah, M. Kumar, M. Neumann-Spallart and C. Levy-Clement, J. Electroanalyt. Chem. 436(1-2) (1997) 49.
15. H. S. Zhou, H. Itaru, K. H. Haus and W. Joseph, Mesosc. Mater. Clusters (1999) 187.
16. C. W. White, J. D. Budai, A. L. Meldrum, S. P. Withrow, R. A. Zuhr, E. Sonder, A. Purezky, D. B. Geohegam, J. G. Zhu and D. O. Henderson, Mater. Res. Soc. Symp. Proc. 504 (1999) 399.
17. J. Z. Ziang, L. Gerward, R. Secco, D. Frost, J. S. Olsen and J. Truckenbrodt, J. Appl. Phys. 87(5) (2000) 2658.
18. H. Wang, J. R. Zhang and J. J. Zhu, J. Cryst. Growth 233 (2001) 829.
19. X. H. Liao, J. J. Zhu and H. Y. Chen, Mater. Sci. Eng. B B85 (2001) 85.
20. A. G. Saskia, Chem. Soc. Rev. 26 (1997) 233.
21. T. Ding, J. R. Zhang, S. Long and J. J. Zhu, Microelect. Eng. 1 (2003) in press.
22. T. Chattopadhyay, H. G. Von Schnering, W. A. Grosshans and W. B. Holzapfel, Physica B 139-140 (1986) 356.
23. S. B. Quadri, J. Yang, B. R. Ratna, E. F. Skelton and J. Z. Hu, Appl. Phys. Lett. 69 (1996) 2205.
24. R. Ahuja, Phys. Stat. Sol. B 235(2) (2003) 341.
25. Joint Committee on Powder Diffraction Standards (JCPDS) File No. 6 - 0261.
26. R. J. Nelmes and M. I. McMahon, Semicond. Semimetals 54 (1998) 145.
27. T. L. Huang and A. L. Ruoff, Phys. Rev. B 31 (1985) 5976.
28. S. H. Tolbert and A. P. Alivisatos, Science 265 (1994) 373.
29. S. H. Tolbert and A. P. Alivisatos, J. Chem. Phys. 102 (1995) 4642.
30. S. H. Tolbert, A. B. Herhold, L. E. Brus and A. P. Alivisatos, Phys. Rev. Lett. 76 (1996) 4385.
31. D. J. Chadi and R. M. Martin, Sol. St. Commn. 19 (1976) 643.
32. B. A. Weinstein, High pressure phonon dispersion of the zinc chalcogenides and the metallic transition, eds. K. D. Timmerhaus and M. S. Barber, in High Pressure Science and Technology (Plenum, New York, 1979), pp. 141-151.
33. T. P. Dougherty, G. P. Wiederrecht, K. A. Nelson, M. H. Garrett, H. P. Jensen and S. P. Warde, Science 258 (1992) 770.